2N3114 npn silicon transistor description: the central semiconductor 2N3114 is a npn silicon transistor, mounted in a hermetically sealed package, designed for general purpose amplifier applications. marking: full part number maximum ratings: (t a =25c unless otherwise noted) symbol units collector-base voltage v cbo 150 v collector-emitter voltage v ceo 150 v emitter-base voltage v ebo 5.0 v continuous collector current i c 200 ma power dissipation p d 0.8 w power dissipation (t c =25c) p d 5.0 w operating and storage junction temperature t j , t stg -65 to +200 c electrical characteristics: (t a =25c unless otherwise noted) symbol test conditions min max units i cbo v cb =100v 10 na i cbo v cb =100v, t a =150c 10 a i ebo v eb =4.0v 100 na bv cbo i c =100a 150 v bv ceo i c =30ma 150 v bv ebo i e =100a 5.0 v v ce(sat) i c =50ma, i b =5.0ma 1.0 v v be(sat) i c =50ma, i b =5.0ma 0.9 v h fe v ce =10v, i c =0.1ma 15 h fe v ce =10v, i c =30ma 30 120 h fe v ce =10v, i c =30ma, t a =?55c 12 f t v ce =10v, i c =30ma, f=20mhz 40 mhz c ob v cb =20v, i e =0, f=140khz 9.0 pf c ib v eb =0.5v, i c =0, f=140khz 80 pf to-39 case r0 (4-november 2010) www.centralsemi.com
2N3114 npn silicon transistor to-39 case - mechanical outline lead code: 1) emitter 2) base 3) collector marking: full part number www.centralsemi.com r0 (4-november 2010
|
